PTF 10019
70 Watts, 860–960 MHz
GOLDMOS
™
Field Effect Transistor
Description
The PTF 10019 is an internally matched, 70 Watt LDMOS FET intended
for cellular, GSM, and D-AMPS applications in the 860 to 960 MHz
range. Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.
•
•
•
•
•
•
INTERNALLY MATCHED
Performance at 960 MHz, 28 Volts
- Output Power = 70 Watts
- Power Gain = 14.5 dB Typ
- Efficiency = 50% Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% Lot Traceability
Typical Output Power vs. Input Power
80
74
Output Power
60
Efficiency
40
66
Output Power (Watts)
50
42
Efficiency (%)
58
A-1
100
2 3 4
19
568
V
DD
= 28 V
20
34
26
18
10
4.0
955
I
DQ
= 600 mA
f = 960 MHz
0.0
1.0
2.0
3.0
0
Input Power (Watts)
Package 20237
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, Pout = 70 W, I
DQ
= 600 mA, f = 960 MHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 600 mA, f = 960 MHz)
Drain Efficiency
(V
DD
= 28 V, Pout = 70 W, I
DQ
= 600 mA, f = 960 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, Pout = 70 W, I
DQ
= 600 mA, f = 960 MHz
—all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
pe
P-1dB
h
Y
Min
13.0
70
45
—
Typ
14.5
75
50
—
Max
—
—
—
10:1
Units
dB
Watts
%
—
e
1
ERICSSON [ ERICSSON ]
