PTF 10043
12 Watts, 1.9–2.0 GHz
GOLDMOS
®
Field Effect Transistor
Description
The PTF 10043 is an internally matched
GOLDMOS
FET intended
for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at
12 watts, it operates at 45% efficiency with 12 dB gain. Nitride sur-
face passivation and full gold metallization ensure excellent device
lifetime and reliability.
INTERNALLY MATCHED
Performance at 2.0 GHz, 26 Volts
- Output Power = 12 Watts Min
- Power Gain = 12 dB Typ at 3 Watts
- Efficiency = 45% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
•
Typical Output Power vs. Input Power
20
Output Power (Watts)
16
12
8
4
0
0.0
0.2
0.4
0.6
0.8
1.0
A-12
100
3456
9834
43
V
DD
= 26 V
I
DQ
= 150 mA
f = 2.0 GHz
Input Power (Watts)
Package 20222
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 26 V, P
OUT
= 3 W, I
DQ
= 150 mA, f = 1.93, 2.0 GHz)
Power Output at 1 dB Compressed
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 150 mA, f = 2.0 GHz)
Drain Efficiency
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 150 mA, f = 2.0 GHz)
Load Mismatch Tolerance
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 150 mA, f = 2.0 GHz
—all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
ps
p-1dB
h
D
Y
Min
11
12
40
—
Typ
12
14
45
—
Max
—
—
—
10:1
Units
dB
Watts
%
—
e
1