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PTF10043 参数 Datasheet PDF下载

PTF10043图片预览
型号: PTF10043
PDF下载: 下载PDF文件 查看货源
内容描述: 12瓦,1.9-2.0 GHz的GOLDMOS场效应晶体管 [12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 6 页 / 237 K
品牌: ERICSSON [ ERICSSON ]
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PTF 10043
12 Watts, 1.9–2.0 GHz
GOLDMOS
®
Field Effect Transistor
Description
The PTF 10043 is an internally matched
GOLDMOS
FET intended
for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at
12 watts, it operates at 45% efficiency with 12 dB gain. Nitride sur-
face passivation and full gold metallization ensure excellent device
lifetime and reliability.
•
•
INTERNALLY MATCHED
Performance at 2.0 GHz, 26 Volts
- Output Power = 12 Watts Min
- Power Gain = 12 dB Typ at 3 Watts
- Efficiency = 45% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
•
•
•
•
Typical Output Power vs. Input Power
20
Output Power (Watts)
16
12
8
4
0
0.0
0.2
0.4
0.6
0.8
1.0
A-12
100
3456
9834
43
V
DD
= 26 V
I
DQ
= 150 mA
f = 2.0 GHz
Input Power (Watts)
Package 20222
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 26 V, P
OUT
= 3 W, I
DQ
= 150 mA, f = 1.93, 2.0 GHz)
Power Output at 1 dB Compressed
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 150 mA, f = 2.0 GHz)
Drain Efficiency
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 150 mA, f = 2.0 GHz)
Load Mismatch Tolerance
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 150 mA, f = 2.0 GHz
—all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
ps
p-1dB
h
D
Y
Min
11
12
40
Typ
12
14
45
Max
10:1
Units
dB
Watts
%
e
1