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PTF10045 参数 Datasheet PDF下载

PTF10045图片预览
型号: PTF10045
PDF下载: 下载PDF文件 查看货源
内容描述: 30瓦, 1.60-1.65 GHz的GOLDMOS场效应晶体管 [30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor]
分类和应用: 晶体射频场效应晶体管放大器局域网
文件页数/大小: 6 页 / 210 K
品牌: ERICSSON [ ERICSSON ]
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PTF 10045
Electrical Characteristics
(100% Tested)
Characteristic
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
e
Conditions
V
GS
= 0 V, I
D
= 25 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 75 mA
V
DS
= 10 V, I
D
= 3 A
Symbol
V
(BR)DSS
I
DSS
V
GS(th)
g
fs
Min
65
3.0
Typ
2.0
Max
1.0
5.0
Units
Volts
mA
Volts
Siemens
RF Specifications
(100% Tested)
Characteristic
Common Source Power Gain
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 380 mA, f = 1650 MHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 380 mA, f = 1650 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 380 mA, f = 1650 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 380 mA, f = 1650 MHz—
all phase angles at frequency of test)
Symbol
G
ps
P-1dB
h
Y
Min
10.0
30
40
Typ
11.5
35
43
Max
10:1
Units
dB
Watts
%
Typical Performance
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power & Efficiency
13
12
Gain (dB)
Efficiency (%)
70
60
50
40
Broadband Test Fixture Performance
Gain
Efficiency (%)
11
50
40
Gain
11
10
9
8
1400
Gain (dB)
10
9
8
7
6
1600
V
DD
= 28 V
I
DQ
= 380 mA
P
OUT
= 30 W
Return Loss (dB)
- 20
5
-10
10
V
DD
= 28 V
I
DQ
= 380 mA
1450
1500
Output Power (W)
30
1550
1600
20
1650
1610
1620
1630
1640
-15
0
1650
Frequency (MHz)
Frequency (MHz)
2
Return Loss
0
30
Efficiency
12
60