PTF 10052
35 Watts, 1.0 GHz
GOLDMOS
™
Field Effect Transistor
Description
The PTF 10052 is a 35 Watt LDMOS FET intended for large signal
amplifier applications to 1.0 GHz. It operates at 55% efficiency and
13.5 dB of gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
•
Performance at 960 MHz, 28 Volts
- Output Power = 35 Watts
- Power Gain = 13.5 dB Typ
- Efficiency = 55% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
100% Lot Traceability
Available in Package 20222 as PTF 10007
•
•
•
•
•
Typical Output Power & Efficiency
vs. Input Power
50
40
Output Pow er (W)
Ef ficiency (%)
100
80
60
40
20
0
0
1
2
3
Package
20235
Efficiency
B-1
234
100
52
56
991
Output Power
6
30
20
10
0
V
DD
= 28 V
I
DQ
= 300 m A
f = 960 MHz
A-12
1000
3456
9725
7
Package
20222
Input Power (Watts)
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 35 W, I
DQ
= 300 mA, f = 960 MHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 300 mA, f = 960 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 35 W, I
DQ
= 300 mA, f = 960 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 35 W, I
DQ
= 300 mA, f = 960 MHz—
all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
ps
P-1dB
h
Y
Min
12.0
35
50
—
Typ
13.5
—
55
—
Max
—
—
—
10:1
Units
dB
Watts
%
—
e
1
ERICSSON [ ERICSSON ]
