PTF 10119
12 Watts, 2.1–2.2 GHz
GOLDMOS
™
Field Effect Transistor
Description
The PTF 10119 is an internally matched, common source, N-channel
enhancement-mode lateral MOSFET intended for WCDMA
applications from 2.1 to 2.2 GHz. It is rated at 12 watts power output.
Nitride surface passivation and gold metallization ensure excellent
device reliability.
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INTERNALLY MATCHED
Performance at 2.17 GHz, 28 Volts
- Output Power = 12 Watts Min
- Power Gain = 11 dB Typ
- Efficiency = 43% Typ @ P-1dB
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% lot traceability
Typical Output Power vs. Input Power
20
Output Power (Watts)
16
12
8
4
0
0
0.2
0.4
0.6
0.8
1
1.2
A-12
1011
9
3456
0053
V
DD
= 28 V
I
DQ
= 160 mA
f = 2170 MHz
Input Power (Watts)
Package 20222
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
V
DSS
V
GS
T
J
P
D
T
STG
R
qJC
Value
65
±20
200
55
0.31
–40 to +150
3.2
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
e
1
ERICSSON [ ERICSSON ]
