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EM68B16CWQH-25H 参数 Datasheet PDF下载

EM68B16CWQH-25H图片预览
型号: EM68B16CWQH-25H
PDF下载: 下载PDF文件 查看货源
内容描述: [32M x 16 bit DDRII Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 60 页 / 1029 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM68B16CWQH  
EtronTech  
EMR(2)  
The extended mode register (2) controls refresh related features. The default value of the extended mode register  
(2) is not defined, therefore the extended mode register (2) must be written after power-up for proper operation. The  
extended mode register(2) is written by asserting LOW on CS#, RAS#, CAS#, WE#, HIGH on BA1 and LOW on  
BA0, while controlling the states of address pins A0 ~ A12. The DDR2 SDRAM should be in all bank precharge with  
CKE already HIGH prior to writing into the extended mode register (2). The mode register set command cycle time  
(tMRD) must be satisfied to complete the write operation to the extended mode register (2). Mode register contents  
can be changed using the same command and clock cycle requirements during normal operation as long as all  
banks are in the precharge state.  
Table 7. Extended Mode Register EMR (2) Bitmap  
BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4  
A3  
A2 A1 A0 Address Field  
0*1  
0*1  
DCC*4  
PASR*3  
SRF  
Extended Mode Register(2)  
1
0
A7  
0
High Temperature Self-Refresh Rate Enable  
Disable  
Enable *2  
1
BA1 BA0 MRS mode  
A3  
0
DCC Enable *4  
Disable  
0
0
1
1
0
1
0
1
MR  
EMR(1)  
EMR(2)  
EMR(3)  
1
Enable  
Partial Array Self Refresh for 4 Banks  
Full array  
A2 A1 A0  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Half Array (BA[1:0]=00&01)  
Quarter Array (BA[1:0]=00)  
Not defined  
3/4 array (BA[1:0]=01,10&11)  
Half array (BA[1:0]=10&11)  
Quarter array (BA[1:0]=11)  
Not defined  
NOTE 1: The rest bits in EMRS(2) are reserved for future use and all bits in EMRS(2) except A0-A2, A7, BA0 and BA1 must  
be programmed to 0 when setting the extended mode register(2) during initialization.  
NOTE 2: Due to the migration nature, user needs to ensure the DRAM part supports higher than 85Tcase temperature  
self-refresh entry. If the high temperature self-refresh mode is supported then controller can set the EMRS2[A7] bit  
to enable the self-refresh rate in case of higher than 85temperature self-refresh operation.  
NOTE 3: If PASR (Partial Array Self Refresh) is enabled, data located in areas of the array beyond the specified location will  
be lost if self refresh is entered. Data integrity will be maintained if tREF conditions are met and no Self Refresh  
command is issued.  
NOTE 4: DCC (Duty Cycle Corrector) implemented, user may be given the controllability of DCC thru EMR (2) [A3] bit.  
Rev. 1.6  
11  
Oct. /2015