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EM6A9325BG-7.5G 参数 Datasheet PDF下载

EM6A9325BG-7.5G图片预览
型号: EM6A9325BG-7.5G
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ×32低功耗SDRAM ( LPSDRAM ) [4M x 32 Low Power SDRAM (LPSDRAM)]
分类和应用: 动态存储器
文件页数/大小: 51 页 / 598 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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Et r on Tech  
EM6A9325  
4M x 32 LPSDRAM  
7
Write and AutoPrecharge command (refer to the following figure)  
(RAS# = "H", CAS# = "L", WE# = "L", BS = Bank, A10 = "H", A0-A7 = Column Address)  
The Write and AutoPrecharge command performs the precharge operation automatically after  
the write operation. Once this command is given, any subsequent command can not occur within a  
time delay of {(burst length -1) + tWR + tRP(min.)}. At full-page burst, only the write operation is  
performed in this command and the auto precharge function is ignored.  
8
Mode Register Set command  
(RAS# = "L", CAS# = "L", WE# = "L", BS0,1 and A11-A0 = Register Data)  
The mode register stores the data for controlling the various operating modes of SDRAM. The  
Mode Register Set command programs the values of CAS# latency, Addressing Mode and Burst  
Length in the Mode register to make SDRAM useful for a variety of different applications. The default  
values of the Mode Register after power-up are undefined; therefore this command must be issued  
at the power-up sequence. The state of pins BA0,1 and A11~A0 in the same cycle is the data written  
to the mode register. One clock cycle is required to complete the write in the mode register (refer to  
the following figure). The contents of the mode register can be changed using the same command  
and the clock cycle requirements during operation as long as all banks are in the idle state.  
T0  
T 1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
CLK  
t
CK2  
CKE  
CS#  
Clock min.  
RAS#  
CAS#  
WE#  
Address Key  
ADDR.  
DQM  
tRP  
Hi-Z  
DQ  
Mode Register  
Set Command  
PrechargeAll  
Any  
Command  
Mode Register Set Cycle (CAS# Latency = 2, 3)  
Preliminary  
11  
Rev 0.4  
June 2003