Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GP60
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
V
ISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
T
vj
= 150°C,
T
vj
= 150°C
T
vj
= 150°C
T
vj
= 150°C,
V
R
= 1600 V
I
F
= 50 A
V
F
V
(TO)
r
T
I
R
R
AA’+CC’
min.
-
-
-
-
-
typ.
1,3
-
-
2
5
max.
1,35
0,8
10,5
-
-
V
V
mΩ
mA
mΩ
Modul Leitungswiderstand, Anschlüsse-Chip
T
C
= 25°C
lead resistance, terminals-chip
Transistor Wechselrichter/ Transistor Inverter
V
GE
= 15V, T
vj
= 25°C,
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
V
GE
= 15V, T
vj
= 125°C,
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
V
CE
= V
GE
,
T
vj
= 25°C,
min.
I
C
=
I
C
=
I
C
=
50 A
50 A
1,0 mA
V
GE(TO)
C
ies
600 V
600 V
I
GES
300 V
22 Ohm
22 Ohm
300 V
22 Ohm
22 Ohm
300 V
22 Ohm
22 Ohm
300 V
22 Ohm
22 Ohm
300 V
22 Ohm
75 nH
300 V
22 Ohm
75 nH
22 Ohm
360 V
3000 A/µs
I
SC
-
E
off
-
E
on
-
t
f
-
-
t
d,off
-
-
t
r
-
-
t
d,on
-
-
I
CES
V
CE sat
-
-
4,5
-
-
-
-
typ.
1,95
2,2
5,5
2,8
1,5
2,0
-
max.
2,55
-
6,5
-
500
-
300
V
V
V
nF
µA
mA
nA
f = 1MHz, T
vj
= 25°C
V
CE
= 25 V, V
GE
= 0 V
V
GE
= 0V,
V
GE
= 0V,
T
vj
= 25°C, V
CE
=
T
vj
=125°C, V
CE
=
V
CE
= 0V, V
GE
=20V, T
vj
=25°C
I
C
= I
Nenn
,
V
CC
=
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
,
V
CC
=
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
,
V
CC
=
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
,
V
CC
=
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
,
V
CC
=
L
S
=
I
C
= I
Nenn
,
V
CC
=
L
S
=
t
P
≤
10µs, V
GE
≤
15V,
T
vj
≤125°C,
R
G
=
V
CC
=
dI/dt =
V
GE
= ±15V, T
vj
= 125°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
50
50
55
55
260
275
30
40
2,3
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
mWs
1,7
-
mWs
200
-
A
2(11)
DB-PIM-9.xls