2N3859A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 100
µA,
I
C
= 0
V
CB
= 18 V, I
E
= 0
V
EB
= 4.0 V, I
C
= 0
60
60
6.0
0.5
0.5
V
V
V
µA
µA
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 1.0 V, I
C
= 1.0 mA
V
CE
= 1.0 V, I
C
= 10 mA
75
100
200
SMALL SIGNAL CHARACTERISTICS
C
ob
f
T
rb’C
c
Output Capacitance
Current Gain - Bandwidth Product
Collector - Base Time Constant
V
CB
= 10 V, f = 1.0 MHz
I
C
= 2.0 mA, V
CE
= 10 V
V
CE
= 10 V, I
C
= 2.0 mA,
f = 31.9 MHz
90
4
250
150
pF
MHz
pS
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
