2N3906 / MMBT3906 / PZT3906
2N3906
MMBT3906
C
E
C
B
TO-92
E
SOT-23
Mark: 2A
B
PZT3906
C
E
C
B
SOT-223
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents of 10
µA
to 100 mA. Sourced
from Process 66.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
40
40
5.0
200
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
©
1997 Fairchild Semiconductor Corporation