2N5086/2N5087/MMBT5087
2N5086/2N5087/MMBT5087
PNP General Purpose Amplifier
• This device is designed for low level, high gain, low
noise general purpose amplifier applications at
collector currents to 50mA.
TO-92
1
1. Emitter 2. Base 3. Collector
3
2
SOT-23
1 Mark: 2Q
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
- Continuous
Parameter
Value
-50
-50
-3.0
-100
-55 ~ +150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I
C
= -1.0mA, I
B
= 0
I
C
= -100µA, I
E
= 0
V
CB
= -10V, I
E
= 0
V
CB
= -35V, I
E
= 0
V
EB
= -3.0V, I
C
= 0
I
C
= -100µA, V
CE
= -5.0V
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
V
CE(sat)
V
BE(on)
f
T
C
cb
h
fe
NF
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Collector-Base Capacitance
Small-Signal Current Gain
Noise Figure
I
C
= -10mA, I
B
= -1.0mA
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -500µA, V
CE
= -5.0V, f = 20MHz
V
CB
= -5.0V, I
E
= 0, f = 100KHz
I
C
= -1.0mA, V
CE
= -5.0V,
f = 1.0KHz
I
C
= -100µA, V
CE
= -5.0V
R
S
= 3.0kΩ, f = 1.0KHz
I
C
= -20µA, V
CE
= -5.0V
R
S
= 10kΩ
f = 10Hz to 15.7KHz
* Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2.0%
Min.
-50
-50
Max.
Units
V
V
Off Characteristics
Collector-Emitter Breakdown Voltage *
V
(BR)CEO
V
(BR)CBO
I
CEO
I
CBO
h
FE
Collector-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
-10
-50
-50
5086
5087
5086
5087
5086
5087
150
250
150
250
150
250
500
800
nA
nA
nA
On Characteristics
-0.3
-0.85
40
4.0
5086
5087
5086
5087
5086
5087
150
250
600
900
3.0
2.0
3.0
2.0
V
V
MHz
pF
Small Signal Characteristics
dB
dB
dB
dB
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
