2N5210/MMBT5210
2N5210/MMBT5210
NPN General Purpose Amplifier
C
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
C
BE
TO-92
B
E
SOT-23
Mark: 3M
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
50
50
4.5
100
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
2N5210
625
5.0
83.3
200
MMBT5210
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
2002 Fairchild Semiconductor Corporation
2N5210, Rev B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
