2N5460 / 2N5461 / 2N5462 / MMBF5460 / MMBF5461
Discrete POWER & Signal
Technologies
2N5460
2N5461
2N5462
MMBF5460
MMBF5461
G
D
G
S
TO-92
D
SOT-23
Mark: 6E / 61U
S
P-Channel General Purpose Amplifier
This device is designed primarily for low level audio and general
purpose applications with high impedance signal sources. Sourced
from Process 89.
Absolute Maximum Ratings*
-
TA = 25°C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
J
,T
stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Parameter
Value
- 40
40
10
-55 to +150
Units
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N5460
625
5.0
83.3
200
Max
*MMBF5460
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
ã
1997 Fairchild Semiconductor Corporation
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
