2N6790
Data Sheet
December 2001
3.5A, 200V, 0.800 Ohm, N-Channel Power
MOSFET
The 2N6790 is an N-Channel enhancement mode silicon
gate power MOS field effect transistor designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. This device can be operated directly
from an integrated circuit.
Features
• 3.5A, 200V
• r
DS(ON)
= 0.800
Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Ordering Information
PART NUMBER
2N6790
PACKAGE
TO-205AF
BRAND
2N6790
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
NOTE: When ordering, include the entire part number.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
SOURCE
GATE
©2001 Fairchild Semiconductor Corporation
2N6790 Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
