Advanced Small Signal MOSFET
FEATURES
!
Lower R
DS(on)
!
Improved Inductive Ruggedness
!
Fast Switching Times
!
Lower Input Capacitance
!
Extended Safe Operating Area
!
Improved High Temperature Reliability
2N7002MTF
BV
DSS
= 60 V
R
DS(on)
= 5.0
Ω
I
D
= 200 mA
SOT-23
Product Summary
Part Number
2N7002
BV
DSS
60V
R
DS
(on)
5.0Ω
I
D
115mA
1.Gate 2. Source 3. Drain
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J
, T
STG
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25℃)
Continuous Drain Current (T
C
=100℃)
Drain Current-Pulsed
Gate-to-Source Voltage
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
①
Value
60
115
73
800
±20
0.2
0.16
- 55 to +150
Units
V
mA
mA
V
W
W/℃
℃
Thermal Resistance
Symbol
R
θJA
Characteristic
Junction-to-Ambient
Typ.
--
Max.
62.5
Units
℃/W
Rev. A1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
