4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol
EMITTER
V
F
Input Forward Voltage*
I
F
= 10mA
4NXXM
H11B1M,
TIL113M
I
R
Reverse Leakage Current*
V
R
= 3.0V
V
R
= 6.0V
C
BV
CEO
Capacitance*
V
F
= 0V, f = 1.0MHz
4NXXM
H11B1M,
TIL113M
All
4NXXM,
TIL113M
H11B1M
BV
CBO
BV
ECO
Collector-Base Breakdown Voltage*
I
C
= 100µA, I
E
= 0
All
4NXXM
H11B1M,
TIL113M
I
CEO
Collector-Emitter Dark Current*
V
CE
= 10V, Base Open
All
Emitter-Collector Breakdown Voltage* I
E
= 100µA, I
B
= 0
30
25
30
5.0
7
0.8
1.2
1.2
0.001
0.001
150
60
60
100
10
10
1
100
nA
V
V
1.5
1.5
100
10
pF
V
µA
V
Parameter
Test Conditions
Device
Min.
Typ.
Max.
Unit
DETECTOR
Collector-Emitter Breakdown Voltage* I
C
= 1.0mA, I
B
= 0
Transfer Characteristics
Symbol
I
C(CTR)
Parameter
Collector Output Current*
(1, 2)
Test Conditions
I
F
= 10mA, V
CE
= 10V,
I
B
= 0
Device
4N32M,
4N33M
4N29M,
4N30M
Min.
50 (500)
10 (100)
5 (500)
30 (300)
Typ.
Max.
Unit
mA (%)
DC CHARACTERISTICS
I
F
= 1mA, V
CE
= 5V
I
F
= 10mA, V
CE
= 1V
V
CE(SAT)
Saturation Voltage*
(2)
H11B1M
TIL113M
4NXXM
TIL113M
H11B1M
4NXXM,
TIL113M
H11B1M
4N32M,
4N33M,
TIL113M
4N29M,
4N30M
I
F
= 8mA, I
C
= 2.0mA
I
F
= 1mA, I
C
= 1mA
1.0
1.25
1.0
5.0
25
100
V
AC CHARACTERISTICS
t
on
Turn-on Time
I
F
= 200mA, I
C
= 50mA,
V
CC
= 10V, R
L
= 100
Ω
I
F
= 10mA, V
CE
= 10V,
R
L
= 100
Ω
t
off
Turn-off Time
I
F
= 200mA, I
C
= 50mA,
V
CC
= 10V, R
L
= 100
Ω
µS
µS
40
18
30
kHz
I
F
= 10mA, V
CE
= 10V,
R
L
= 100
Ω
BW
Bandwidth
(3, 4)
H11B1M
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com
3
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
