KA5X0165RXX-SERIES
Electrical Characteristics (SFET Part)
(Ta=25°C unless otherwise specified)
Parameter
D
rain-Source Breakdown Voltage
Z
ero Gate Voltage Drain Current
Static Drain-Source on Resistance
(Note)
Forward Transconductance
(Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
Symbol
BV
DSS
I
DSS
R
DS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DD
=0.5B V
DSS
, I
D
=1.0A
(MOSFET switching time is
essentially independent of
operating temperature)
V
GS
=10V, I
D
=1.0A,
V
DS
=0.5B V
DSS
(MOSFET
switching time is essentially
independent of operating
temperature)
V
GS
=0V, V
DS
=25V,
f=1MHz
Condition
V
GS
=0V, I
D
=50µA
V
DS
=Max. Rating, V
GS
=0V
V
DS
=0.8Max. Rating,
V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=0.5A
V
DS
=50V, I
D
=0.5A
Min.
650
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
8
-
250
25
10
12
4
30
10
-
3
9
Max.
-
50
200
10
-
-
-
-
-
-
-
-
21
-
-
nC
nS
pF
Unit
V
µA
µA
Ω
S
Note:
1. Pulse test: Pulse width
≤
300µS, duty cycle
≤
2%
2.
1
S
= ---
-
R
3
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
