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BAV103 参数 Datasheet PDF下载

BAV103图片预览
型号: BAV103
PDF下载: 下载PDF文件 查看货源
内容描述: 高电压,通用二极管 [High Voltage, General Purpose Diode]
分类和应用: 二极管
文件页数/大小: 3 页 / 27 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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BAV103
General Description:
A General Purpose diode that couples high forward
conductance fast switching speed and high blocking
voltages in a glass leadless LL-34 Surface Mount
package.
Placement of the Expansion Gap has no relationship to
the location of the Cathode Terminal which is indicated
by the first color band.
Expansion Gap
GREEN
ORANGE
High Voltage,
General Purpose Diode
Absolute Maximum Ratings*
Sym
T
stg
T
J
P
D
R
OJA
W
iv
I
O
I
F
i
f
i
F(surge)
TA = 25
O
C unless otherwise noted
Parameter
Storage Temperature
Operating Junction Temperature
Total Power Dissipation at T
A
= 25
O
C
Linear Derating Factor from T
A
= 25
O
C
Thermal Resistance Junction-to-Ambient
Working Inverse Voltage
Average Rectified Current
DC Forward Current (I
F
)
Recurrent Peak Forward Current
Peak Forward Surge Current (I
FSM
) Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Value
-65 to +200
-65 to +200
500
3.33
350
200
200
500
600
1.0
4.0
Units
O
C
O
C
mW
mW/
O
C
O
C/W
V
mA
mA
mA
Amp
Amp
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
Electrical Characteristics
SYM
B
V
I
R
V
F
C
T
T
RR
TA = 25
O
C unless otherwise noted
CHARACTERISTICS
Breakdown Voltage
Reverse Leakage
Forward Voltage
Capacitance
Reverse Recovery Time
MIN
250
MAX
UNITS
V
I
R
TEST CONDITIONS
= 100 uA
100
100
1.00
1.25
5.0
50
nA
uA
V
V
pF
ns
V
R
= 200 V
V
R
= 200 V T
A
= 150
O
C
I
F
= 100 mA
I
F
= 200 mA
V
R
=
0.0 V, f = 1.0 MHz
I
F
= I
R
30 mA I
RR
= 1.0 mA
R
L
= 100 Ohms
© 1997 Fairchild Semiconductor Corporation