BC847S
BC847S
E2
B2
C1
SC70-6
Mark: 1C
pin #1
C2
B1
E1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
NPN Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 200 mA. Sourced from Process 07.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector-Emitter Voltage
T
A
= 25°C unless otherwise noted
Parameter
Value
45
50
50
6.0
200
-55 to +150
Units
V
V
V
V
mA
°C
4
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
T
A
= 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
BC847S
300
2.4
415
Units
mW
mW/°C
°C/W
2001
Fairchild Semiconductor Corporation
Rev.A1