BCP51 ... BCP53
Characteristics (T
j
= 25°C)
Min.
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- V
CB
= 30 V, (E open)
- V
CB
= 30 V, T
j
= 125°C, (E open)
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- V
EB
= 5 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 100 MHz
DC current gain ratio of the complementary pairs
Verhältnis der Stromverstärkungen komplementärer Paare
l I
C
l = 150 mA, l V
CE
l = 2 V
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to soldering point
Wärmewiderstand Sperrschicht – Lötpad
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
h
FE1
/h
FE2
R
thA
R
thS
–
–
< 93 K/W
1
)
< 27 K/W
BCP54 ... BCP56
1.6
f
T
–
120 MHz
–
- I
EB0
–
–
100 nA
- I
CB0
- I
CB0
–
–
–
–
100 nA
10 µA
Kennwerte (T
j
= 25°C)
Typ.
Max.
120
[%]
100
80
60
40
20
P
tot
0
0
T
A
50
100
150
[°C]
Power dissipation versus ambient temperature
1
)
Verlustleistung in Abh. von d. Umgebungstemp.
1
)
1
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
2
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
