BCP68
BCP68
NPN General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers.
• Sourced from process 37.
3
2
1
4
SOT-223
1. Base 2.4. Collector 3. Emitter
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation
- Derate above 25°C
@ T
A
=25°C
Parameter
Value
20
30
5
1
1.5
12
- 55 ~ +150
Units
V
V
V
A
Watts
mW/°C
°C
Operating and Storage Junction Temperature Range
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CES
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
Parameter
Test Conditions
I
C
= 100µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 25V, I
E
= 0, T
A
= 25°C
V
CB
= 25V, I
E
= 0, T
A
= 125°C
V
EB
= 5V, I
C
= 0
I
C
= 5mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 1V
I
C
= 1A, V
CE
= 1V
I
C
= 1A, I
B
= 100mA
I
C
= 1A, V
CE
= 1V
50
85
60
Min.
25
20
5
10
1
10
Typ.
Max.
Units
V
V
V
µA
mA
µA
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
On Characteristics (1)
375
0.5
1
V
V
V
CE(sat)
V
BE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
©2001 Fairchild Semiconductor Corporation
Rev. A, August 2001
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
