BCX17
BCX17
PNP General Purpose Amplifier
• This device is esigned for general purpose amplifier and switching
application at current 0.5A.
• Sourced from process 78.
3
2
1
SOT-23
Mark: T1
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
- Continuous
Parameter
Value
45
50
5.0
500
-55 ~ +150
Units
V
V
V
mA
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I
C
= 10mA, I
B
= 0
I
C
= 10µA, I
C
= 0
V
CE
= 20V, I
E
= 0
V
CE
= 20V, I
E
= 0, TA = 150°C
V
EB
= 5.0V, I
C
= 0
I
C
= 100mA, V
CE
= 1.0V
I
C
= 300mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 1.0V
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, V
CE
= 1.0V
100
70
40
Min.
45
50
100
5.0
10
600
Typ.
Max.
Units
V
V
nA
µA
µA
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage
V
(BR)CES
I
CBO
I
EBO
h
FE
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
On Characteristics
V
CE(sat)
V
BE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.62
1.2
V
V
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
P
D
Total Device Dissipation
Alumina Substrate,** T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Parameter
Max.
300
2.4
417
Units
mW
mW/°C
°C/W
R
θJA
** Alumina = 0.4×0.3×0.024 in. 9.5% alumina
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
