BCX71K 参数 Datasheet PDF下载

BCX71K

BCX71K

C

E

SOT-23

Mark: BK

B

PNP General Purpose Amplifier

This device is designed for applications requiring extremely

high current gain at collector currents to 300 mA. Sourced

from Process 68.

Absolute Maximum Ratings*

Symbol

V

CEO

V

CES

V

EBO

I

C

T

J

, T

stg

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

TA = 25°C unless otherwise noted

Parameter

Value

45

45

5.0

500

-55 to +150

Units

V

V

V

mA

°C

3

Operating and Storage Junction Temperature Range

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)

These ratings are based on a maximum junction temperature of 150 degrees C.

2)

These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3)

All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics

Symbol

P

D

R

θJA

TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient

Max

*BCX71K

350

2.8

357

Units

mW

mW/°C

°C/W

*

Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

1997

Fairchild Semiconductor Corporation