BD135/137/139
BD135/137/139
Medium Power Linear and Switching
Applications
• Complement to BD136, BD138 and BD140 respectively
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Voltage
: BD135
: BD137
: BD139
: BD135
: BD137
: BD139
Value
45
60
80
45
60
80
5
1.5
3.0
0.5
12.5
1.25
150
- 55 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
V
CEO
Collector-Emitter Voltage
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: BD135
: BD137
: BD139
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: ALL DEVICE
: ALL DEVICE
: BD135
: BD137, BD139
Test Condition
I
C
= 30mA, I
B
= 0
Min.
45
60
80
0.1
10
25
25
40
40
Typ.
Max.
Units
V
V
V
µA
µA
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(on)
V
CB
= 30V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 5mA
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
= 150mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 2V, I
C
= 0.5A
250
160
0.5
1
V
V
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
h
FE
Classification
Classification
h
FE3
©2000 Fairchild Semiconductor International
6
40 ~ 100
10
63 ~ 160
16
100 ~ 250
Rev. A, February 2000
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
