BDW94/C PNP Epitaxial Silicon Transistor
January 2005
BDW94/C
PNP Epitaxial Silicon Transistor
Power Linear and Switching Application
• Power Darlington TR
• Complement to BDW93 and BDW93C Respectively
1
TO-220
2.Collector
3.Emitter
1.Base
Absolute Maximum Ratings
Symbol
V
CBO
Collector-Base Voltage
T
a
= 25°C unless otherwise noted
Parameter
: BDW94
: BDW94C
Value
-45
-100
-45
-100
-12
-15
-0.2
80
150
-65 ~ 150
Units
V
V
V
V
A
A
A
W
°C
°C
V
CEO
Collector-Emitter Voltage
: BDW94
: BDW94C
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector Current (DC)
Collector Current (Pulse) *
Base Current
Collector Dissipation (T
C
= 25°C)
Junction Temperature
Storage Temperature
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BDW94/C Rev. B