BSR17A
NPN General Purpose Amplifier
(continued)
Typical Characteristics
500
400
125 °C
V
CE
= 5V
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYP ICAL PULSED CURRE NT GAIN
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
0.15
β
= 10
125 °C
300
25 °C
0.1
25 °C
200
100
0
0.1
- 40 °C
0.05
- 40 °C
1
10
I
C
- COLLECTOR CURRENT (mA)
100
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
V
-
BE(ON)
BASE-EMITTER ON VOLTAGE (V)
V
BESAT
- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
β
= 10
Base-Emitter ON Voltage vs
Collector Current
1
V
CE
= 5V
0.8
- 40 °C
25 °C
0.8
- 40 °C
25 °C
3
125 °C
0.6
0.6
125 °C
0.4
0.4
0.1
I
C
1
10
- COLLECTOR CURRENT (mA)
100
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
500
CAPACITANCE (pF)
10
Capacitance vs
Reverse Bias Voltage
f = 1.0 MHz
100
10
1
0.1
V
CB
= 30V
5
4
3
2
C obo
C ibo
25
50
75
100
125
T
A
- AMBIENT TEMPERATURE (
°
C)
150
1
0.1
1
10
REVERSE BIAS VOLTAGE (V)
100
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
