EGP30A - EGP30K 3.0 Ampere Glass Passivated High Efficiency Rectifiers
July 2007
EGP30A - EGP30K
3.0 Ampere Glass Passivated High Efficiency Rectifiers
Features
• Glass passivated cavity-free junction
• High surge current capability
• Low leakage current
• Superfast recovery time for high efficiency
• Low forward voltage, high current capability
DO-201AD Glass case
COLOR BAND DENOTES CATHODE
Absolute Maximum Ratings*
Symbol
I
O
i
f(surge)
T
a
= 25°C unless otherwise noted
Parameter
Average Rectified Current
.375 " lead length @ T
L
= 55°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Junction and Storage Temperature Range
Value
3.0
Units
A
125
6.25
50
20
8.5
-65 ~ 150
A
W
mW°C
°C/W
°C/W
°C
P
D
R
θJA
R
θJL
T
J
, T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics*
Parameter
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage (Rated V
R
)
Maximum Reverse Current
@ rated V
R
T
A
= 25°C
T
A
= 125°C
Maximum Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
Maximum Forward Voltage @ 3.0 A
Typical Junction Capacitance
V
R
= 4.0 V, f = 1.0 MHz
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
T
a
= 25°C unless otherwise noted
Device
30A
50
35
50
30B
100
70
100
30C
150
105
150
30D
200
140
200
5.0
100
50
0.95
95
1.25
75
75
1.7
30F
300
210
300
30G
400
280
400
30J
600
420
600
30K
800
560
800
Units
V
V
V
μA
μA
nS
V
pF
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
EGP30A - EGP30K Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
