FDA28N50 N-Channel MOSFET
August 2008
FDA28N50
N-Channel MOSFET
500V, 28A, 0.155Ω
Features
• R
DS(on)
= 0.122Ω ( Typ.)@ V
GS
= 10V, I
D
= 14A
• Low gate charge ( Typ. 80nC)
• Low C
rss
( Typ. 42pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
UniFET
TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Failchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These device are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
G DS
TO-3PN
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25 C)
o
Parameter
Ratings
500
±30
25
o
C)
o
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
o
-Continuous (T
C
=
- Pulsed
28
17
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
112
2391
28
31
5
310
2.5
-55 to +150
300
-Continuous (T
C
= 100 C)
- Derate above 25 C
o
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
C
C
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
Ratings
0.4
0.24
40
o
Units
C/W
©2008 Fairchild Semiconductor Corporation
FDA28N50 Rev. A
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
