FDP5690/FDB5690
July 2000
FDP5690/FDB5690
60V N-Channel PowerTrench
TM
MOSFET
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(on)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
Features
• 32 A, 60 V. R
DS(ON)
= 0.027
Ω
@ V
GS
= 10 V
R
DS(ON)
= 0.032
Ω
@ V
GS
= 6 V.
• Critical DC electrical parameters specified at evevated
temperature.
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
• High performance trench technology for extremely low
R
DS(ON)
.
• 175°C maximum junction temperature rating.
D
D
G
G
D
S
TO-220
FDP Series
G
S
T
C
= 25°C unless otherwise noted
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current
Parameter
FDP5690
60
±20
FDB5690
Units
V
V
A
W
W/°C
°C
- Continuous
- Pulsed
32
100
58
0.4
-65 to +175
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.6
62.5
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDB5690
FDP5690
2000
Fairchild Semiconductor International
Device
FDB5690
FDP5690
Reel Size
13’’
Tube
Tape Width
24mm
N/A
Quantity
800
45
FDP5690/FDB5690 Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
