FDP6670AL/FDB6670AL
May 2003
FDP6670AL/FDB6670AL
N-Channel Logic Level PowerTrench
®
MOSFET
General Description
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
It has been optimized for low gate charge, low R
DS(ON)
and fast switching speed.
Features
•
80 A, 30 V
R
DS(ON)
= 6.5 mΩ @ V
GS
= 10 V
R
DS(ON)
= 8.5 mΩ @ V
GS
= 4.5 V
•
Critical DC electrical parameters specified at
elevated temperature
•
High performance trench technology for extremely
low R
DS(ON)
•
175°C maximum junction temperature rating
D
D
G
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
±
20
(Note 1)
(Note 1)
Units
V
V
A
W
W/°C
°C
80
240
68
0.45
–65 to +175
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.2
62.5
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDB6670AL
FDP6670AL
Device
FDB6670AL
FDP6670AL
Reel Size
13’’
Tube
Tape width
24mm
n/a
Quantity
800 units
45
©2003
Fairchild Semiconductor Corporation
FDP6670AL/FDB6670AL Rev D(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
