FDB8870
May 2008
FDB8870
N-Channel PowerTrench
®
MOSFET
30V, 160A, 3.9mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
tm
Features
• r
DS(ON)
= 3.9mΩ V
GS
= 10V, I
D
= 35A
,
,
• r
DS(ON)
= 4.4mΩ V
GS
= 4.5V, I
D
= 35A
• High performance trench technology for extremely low
r
DS(ON)
• Low gate charge
Applications
• DC/DC converters
• High power and current handling capability
D
GATE
G
SOURCE
DRAIN
(FLANGE)
TO-263AB
FDB SERIES
S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Note 1)
I
D
Continuous (T
C
=
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above
25
o
C
Operating and Storage Temperature
25
o
C,
V
GS
= 4.5V) (Note 1)
V
GS
= 10V, with R
θJA
=
43
o
C/W)
Continuous (T
amb
=
25
o
C,
160
150
23
Figure 4
300
160
1.07
-55 to 175
A
A
A
A
mJ
W
W/
o
C
o
C
Parameter
Ratings
30
±20
Units
V
V
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263 ( Note 3)
Thermal Resistance Junction to Ambient TO-263,
1in
2
copper pad area
0.94
62
43
o
o
C/W
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDB8870
Device
FDB8870
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
©2008 Fairchild Semiconductor Corporation
FDB8870 Rev. A3
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
