FDB8878 N-Channel PowerTrench
®
MOSFET
November 2005
FDB8878
N-Channel Logic Level PowerTrench
®
MOSFET
30V, 48A, 14mΩ
General Descriptions
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Features
r
DS(ON)
= 14mΩ, V
GS
= 10V, I
D
= 40A
r
DS(ON)
= 18mΩ, V
GS
= 4.5V, I
D
= 36A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
RoHS Compliant
D
GATE
G
SOURCE
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
D
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
I
D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 25 C, V
GS
= 4.5V)
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Operating and Storage Temperature
(Note 4)
L = 1mH, I
AS
= 11A
L = 0.03mH,I
AS
= 38A
o
Parameter
Ratings
30
±20
48
42
170
60
21
47.3
-55 to 175
Units
V
V
A
A
A
mJ
W
o
C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case (Note 2)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
3.7
43
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDB8878
Device
FDB8878
Package
TO-263
Reel Size
13”
Tape Width
24mm
Quantity
800 units
©2005 Fairchild Semiconductor Corporation
FDB8878 Rev. A
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
