FDC5612
December 2004
FDC5612
60V N-Channel PowerTrench
®
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
Features
•
4.3 A, 60 V. R
DS(ON)
= 0.055
Ω
•
•
•
•
@ V
GS
= 10 V
R
DS(ON)
= 0.064
Ω
@ V
GS
= 6 V
Low gate charge (12.5nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
SuperSOT
TM
-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
S
D
D
1
6
2
5
G
D
SuperSOT -6
TM
3
4
D
T
A
= 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
- Continuous
- Pulsed
Parameter
Ratings
60
(Note 1a)
Units
V
V
A
W
°
C
±
20
4.3
20
1.6
0.8
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°
C/W
°
C/W
Package Outlines and Ordering Information
Device Marking
.562
Device
FDC5612
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©
2004 Fairchild Semiconductor Corporation
FDC5612 Rev. C2
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
