FDC606P
December 2001
FDC606P
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.
Features
•
–6 A, –12 V.
R
DS(ON)
= 26 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 35 mΩ @ V
GS
= –2.5 V
R
DS(ON)
= 53 mΩ @ V
GS
= –1.8 V
Applications
•
Battery management
•
Load switch
•
Battery protection
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
D
D
S
1
2
G
6
5
4
SuperSOT -6
TM
D
D
3
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–12
±8
(Note 1a)
Units
V
V
A
W
°C
–6
–20
1.6
0.8
–55 to +150
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
.606
Device
FDC606P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
2001
Fairchild Semiconductor Corporation
FDC606P Rev E (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
