March 1999
FDC6324L
Integrated Load Switch
General Description
These Integrated Load Switches are produced using
Fairchild's proprietary, high cell density, DMOS
technology. This very high density process is
especially tailored to minimize on-state resistance and
provide superior switching performance. These devices
are particularly suited for low voltage high side load
switch application where low conduction loss and ease
of driving are needed.
Features
V
DROP
=0.2V @ V
IN
=12V, I
L
=1A, V
ON/OFF
=1.5 to 8V
V
DROP
=0.3V @ V
IN
=5V, I
L
=1A, V
ON/OFF
=1.5 to 8V.
High density cell design for extremely low on-resistance.
V
ON/OFF
Zener protection for ESD ruggedness.
>6KV Human Body Model.
SuperSOT
TM
-6 package design using copper lead frame for
superior thermal and electrical capabilities.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
V in,R1
4
Q2
3
EQUIVALENT CIRCUIT
Vout,C1
O N / O FF
5
Q1
2
IN
+
V
DROP
-
OUT
Vout,C1
O N / O FF
R1,C1
6
See Application Circuit
1
R2
pin
1
SuperSOT
TM
-6
Absolute Operating Range
Symbol
Parameter
T
A
= 25°C unless otherwise noted
FDC6324L
Units
V
IN
V
ON/OFF
I
L
Input Voltage Range
ON/OFF Voltage Range
Load Current @ V
DROP
=0.5V - Continuous
- Pulsed
(Note 1)
(Note 1 & 3)
(Note 2a)
3 - 20
1.5 - 8
1.5
2.5
0.7
-55 to 150
6
V
V
A
P
D
T
J
,T
STG
ESD
Maximum Power Dissipation
Operating and Storage Temperature Range
W
°C
kV
Electrostatic Discharge Rating MIL-STD-883D Human Body
Model (100pf/1500Ohm)
THERMAL CHARACTERISTICS
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 2a)
(Note 2)
180
60
°C/W
°C/W
© 1999 Fairchild Semiconductor Corporation
FDC6324L Rev. D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
