August 1998
FDC6325L
Integrated Load Switch
General Description
This device is particularly suited for compact power
management in portable electronic equipment where
2.5V to 8V input and 1.8A output current capability are
needed. This load switch integrates a small N-Channel
power MOSFET (Q1) which drives a large P-Channel
power MOSFET (Q2) in one tiny SuperSOT
TM
-6
package.
Features
V
DROP
=0.2V @ V
IN
=5V, I
L
=1.5A. R
(ON)
= 0.13
Ω
V
DROP
=0.2V @ V
IN
=3.3V, I
L
=1.2A. R
(ON)
= 0.16
Ω
V
DROP
=0.2V @ V
IN
=2.5V, I
L
=1A. R
(ON)
= 0.18
Ω.
SuperSOT
TM
-6 package design using copper lead frame
for superior thermal and electrical capabilities.
SOT-23
SuperSOT -6
TM
SuperSOT -8
TM
SO-8
SOT-223
SOIC-16
EQUIVALENT CIRCUIT
Vin,R1
4
Q2
3
Vout,C1
5
32
.
pin
1
ON/OFF
5
Q1
2
IN
+
V
DROP
-
OUT
Vout,C1
ON/OFF
R1,C1
6
See Application Circuit
1
R2
SuperSOT
TM
-6
Absolute Maximum Ratings
Symbol
V
IN
V
ON/OFF
I
L
Parameter
Input Voltage Range
On/Off Voltage Range
Load Current
T
A
= 25°C unless otherwise noted
FDC6325L
2.5 - 8
1.5 - 8
- Continuous
- Pulsed
(Note 1)
(Note 1 & 3)
(Note 2)
Units
V
V
A
1.8
5
0.7
-55 to 150
6
P
D
T
J
,T
STG
ESD
Maximum Power Dissipation
Operating and Storage Temperature Range
W
°C
kV
Electrostatic Discharge Rating MIL-STD-883D Human Body
Model (100pf/1500Ohm)
THERMAL CHARACTERISTICS
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 2)
(Note 2)
180
60
°C/W
°C/W
© 1998 Fairchild Semiconductor Corporation
FDC6325L Rev.D1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
