FDC637AN
November 1999
FDC637AN
Single N-Channel, 2.5V Specified PowerTrench
TM
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint compared
with bigger SO-8 and TSSOP-8 packages.
Features
•
6.2 A, 20 V. R
DS(on)
= 0.024
Ω
@ V
GS
= 4.5 V
R
DS(on)
= 0.032
Ω
@ V
GS
= 2.5 V
•
•
•
•
Fast switching speed.
Low gate charge (10.5nC typical).
High performance trench technology for extremely
low R
DS(ON)
.
SuperSOT
TM
-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
Applications
•
•
•
DC/DC converter
Load switch
Battery Protection
D
D
S
1
6
2
5
SuperSOT -6
TM
D
D
G
3
4
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
- Continuous
- Pulsed
T
A
= 25°C unless otherwise noted
Parameter
FDC637AN
20
±8
(Note 1a)
Units
V
V
A
W
°C
6.2
20
1.6
0.8
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
°C/W
Package Outlines and Ordering Information
Device Marking
.637
Device
FDC637AN
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
1999
Fairchild Semiconductor Corporation
FDC637AN, Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
