FDC655BN Single N-Channel, Logic Level, PowerTrench
®
MOSFET
April 2005
FDC655BN
Single N-Channel, Logic Level, PowerTrench
®
MOSFET
Features
■
6.3 A, 30 V.
R
DS(ON)
= 25 m
Ω
@ V
GS
= 10 V
R
DS(ON)
= 33 m
Ω
@ V
GS
= 4.5 V
■
Fast switching
■
Low gate charge
■
High performance trench technology for extremely low Rdson
General Description
This N-Channel Logic Level MOSFET is produced using Fair-
child Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimized on-state resistance and
yet maintain superior switching performance.
These devices are well suited for low voltage and battery pow-
ered applications where low in-line power loss and fast switch-
ing are required.
D
D
S
55
TM
B
G
D
1
2
3
6
5
4
SuperSOT-6
D
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
R
θ
JA
R
θ
JC
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
(Note 1a)
Parameter
Ratings
30
±
20
6.3
20
1.6
0.8
– 55 to +150
Units
V
V
A
W
°
C
°
C/W
°
C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
Package Marking and Ordering Information
Device Marking
.55B
Device
FDC655BN
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDC655BN Rev. C(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
