June 1998
FDC655AN
Single N-Channel, Logic Level, PowerTrench
TM
MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
Features
6.3 A, 30 V. R
DS(ON)
= 0.027
Ω
@ V
GS
= 10 V
R
DS(ON)
= 0.035
Ω
@ V
GS
= 4.5 V.
Fast switching.
Low gate charge ( typical 9 nC).
SuperSOT
TM
-6 package: small footprint (72% smaller than
SO-8); low profile (1mm thick); pin compatible with
TSOP-6.
SOT-23
SuperSOT
TM
-6
SuperSOT -8
TM
SO-8
SOT-223
SOIC-16
S
D
D
1
6
.55
pin
1
A
G
D
D
2
5
3
4
SuperSOT
TM
-6
Absolute Maximum Ratings
T
A
= 25°C unless otherwise note
Symbol Parameter
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1a)
FDC655AN
30
±20
6.3
20
1.6
0.8
-55 to 150
Units
V
V
A
W
T
J
,T
STG
R
θJA
R
θJC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
°C/W
© 1998 Fairchild Semiconductor Corporation
FDC655AN Rev.C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
