FDD3706/FDU3706
April 2002
FDD3706/FDU3706
20V N-Channel PowerTrench
®
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS( ON)
, fast switching speed and
extremely low R
DS(ON)
in a small package.
Features
•
50 A, 20 V
R
DS(ON)
= 9 mΩ @ V
GS
= 10 V
R
DS(ON)
= 11 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 16 mΩ @ V
GS
= 2.5 V
•
Low gate charge (16 nC)
•
Fast Switching
•
High performance trench technology for extremely
low R
DS(ON)
Applications
•
DC/DC converter
•
Motor Drives
D
G
D-PAK
TO-252
(TO-252)
I-PAK
(TO-251AA)
G D S
G
S
o
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
T
A
=25 C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C
@T
A
=25°C
Pulsed
(Note 3)
(Note 1a)
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
20
±
12
50
14.7
60
44
3.8
1.6
-55 to +175
Units
V
V
A
P
D
Power Dissipation
@T
C
=25°C
@T
A
=25°C
@T
A
=25°C
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
3.4
45
96
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDD3706
FDU3706
Device
FDD3706
FDU3706
Package
D-PAK (TO-252)
I-PAK (TO-251)
Reel Size
13’’
Tube
Tape width
12mm
N/A
Quantity
2500 units
75
©2002
Fairchild Semiconductor Corp.
FDD3706/FDU3706 Rev C (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
