FDD5690
December 2002
FDD5690
60V N-Channel PowerTrench
®
MOSFET
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
Features
30 A, 60 V. R
DS(ON)
= 0.027Ω @ V
GS
= 10 V
R
DS(ON)
= 0.032
Ω
@ V
GS
= 6 V.
Low gate charge (23nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
D
D
G
S
TO-252
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current
Maximum Drain Current
P
D
-Continuous
-Pulsed
o
G
S
T
C
=25
o
C unless otherwise noted
Parameter
Ratings
60
(Note 1)
(Note 1a)
Units
V
V
A
±20
30
9
100
50
3.2
1.3
-55 to +150
Maximum Power Dissipation @ T
C
= 25 C
T
A
= 25 C
T
A
= 25 C
o
o
(Note 1)
(Note 1a)
(Note 1b)
W
T
J
, T
stg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to- Case
Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.5
40
96
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDD5690
Device
FDD5690
Reel Size
13’’
Tape width
16mm
Quantity
2500
2002
Fairchild Semiconductor Corporation
FDD5690, Rev.
C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
