FDD6030L
August 2003
FDD6030L
30V N-Channel PowerTrench
®
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
superior switching performance.
Features
•
12 A, 30 V
R
DS(ON)
= 14.5 mΩ @ V
GS
= 10 V
R
DS(ON)
= 21 mΩ @ V
GS
= 4.5 V
•
Low gate charge
•
Fast Switching Speed
•
High performance trench technology for extremely
low R
DS(ON)
Applications
•
DC/DC converter
•
Motor Drives
D
D
G
S
G
D-PAK
TO-252
(TO-252)
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
±20
(Note 3)
(Note 1a)
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Units
V
V
A
Continuous Drain Current @T
C
=25°C
@T
A
=25°C
Pulsed
50
12
100
56
3.2
1.5
–55 to +175
P
D
Power Dissipation
@T
C
=25°C
@T
A
=25°C
@T
A
=25°C
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.7
45
96
°C/W
Package Marking and Ordering Information
Device Marking
FDD6030L
Device
FDD6030L
Package
D-PAK (TO-252)
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
©2003
Fairchild Semiconductor Corporation
FDD6030L Rev E