FDD6296/FDU6296
June 2004
FDD6296/FDU6296
30V N-Channel Fast Switching PowerTrench
®
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
Features
•
50A, 30 V
R
DS(ON)
= 8.8 mΩ @ V
GS
= 10 V
R
DS(ON)
= 11.3 mΩ @ V
GS
= 4.5 V
•
Low gate charge
•
Fast switching
•
High performance trench technology for extremely
low R
DS(ON)
Applications
•
DC/DC converter
•
Power management
D
D
G
S
I-PAK
(TO-251AA)
G D S
G
D-PAK
TO-252
(TO-252)
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
T
A
=25 C unless otherwise noted
o
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C
@T
A
=25°C
Pulsed
(Note 3)
(Note 1a)
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
30
±
20
50
15
100
52
3.8
1.6
–55 to +175
Units
V
A
P
D
Power Dissipation
@T
C
=25°C
@T
A
=25°C
@T
A
=25°C
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.9
40
96
°C/W
Package Marking and Ordering Information
Device Marking
FDD6296
FDU6296
©2004
Fairchild Semiconductor Corporation
Device
FDD6296
FDU2696
Package
D-PAK (TO-252)
I-PAK (TO-251)
Reel Size
13’’
Tube
Tape width
12mm
N/A
Quantity
2500 units
75
FDD6296/FDU6296 Rev C(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
