FDD6670AL
May 2004
FDD6670AL
30V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS( ON)
and fast switching speed.
Features
•
84 A, 30 V.
R
DS(ON)
= 5 mΩ @ V
GS
= 10 V
R
DS(ON)
= 6 mΩ @ V
GS
= 4.5 V
•
Low gate charge
•
Fast switching
•
High performance trench technology for extremely
low R
DS(ON)
Applications
•
DC/DC converter
•
Motor Drives
D
G
S
D
I-PAK
(TO-251AA)
G D S
G
D-PAK
TO-252
(TO-252)
S
o
Absolute Maximum Ratings
Symbo
l
V
DSS
V
GSS
I
D
P
D
T
A
=25 C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
Ratings
30
±20
84
100
83
3.8
1.6
–55 to +175
Units
V
A
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
1.8
40
96
°C/W
Package Marking and Ordering Information
Device Marking
FDD6670AL
Device
FDD6670AL
Package
D-PAK (TO-252)
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2004
Fairchild Semiconductor Corporation
FDD6670AL Rev C (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
