FDD8447L 40V N-Channel PowerTrench
®
MOSFET
May 2008
FDD8447L
40V N-Channel PowerTrench
®
MOSFET
40V, 50A, 8.5mΩ
Features
General Description
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench
®
technology to
deliver low r
DS(on)
and optimized BV
DSS
capability to offer
superior performance benefit in the application.
Max r
DS(on)
= 8.5mΩ at V
GS
= 10V, I
D
= 14A
Max r
DS(on)
= 11.0mΩ at V
GS
= 4.5V, I
D
= 11A
Fast Switching
RoHS Compliant
Applications
Inverter
Power Supplies
D
G
S
D
G
D
O -2 52
T
-PA K
(TO -252)
Parameter
S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
S
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Max Pulse Diode Current
Drain-Source Avalanche Energy
Power Dissipation
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1b)
(Note 3)
T
C
= 25°C
T
C
= 25°C
T
A
= 25°C
(Note 1a)
Ratings
40
±20
50
57
15.2
100
100
153
44
3.1
1.3
-55
to +150
°C
W
A
mJ
A
Units
V
V
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
2.8
40
96
°C/W
Package Marking and Ordering Information
Device Marking
FDD8447L
Device
FDD8447L
Package
D-PAK(TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDD8447L Rev.C3
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
