FDG311N
February 2000
FDG311N
N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance. These devices are
well suited for portable electronics applications.
Features
•
1.9 A, 20 V. R
DS(ON)
= 0.115
Ω
@ V
GS
= 4.5 V
R
DS(ON)
= 0.150
Ω
@ V
GS
= 2.5 V.
•
•
•
Low gate charge (3nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
Compact industry standard SC70-6 surface mount
package.
Applications
•
•
•
Load switch
Power management
DC/DC converter
D
D
S
1
6
2
5
SC70-6
D
D
G
3
4
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
T
A
= 25 C unless otherwise noted
Parameter
Ratings
20
(Note 1a)
Units
V
V
A
W
°C
±8
1.9
6
0.75
0.48
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
260
°C/W
Package Marking and Ordering Information
Device Marking
.
11
Device
FDG311N
Reel Size
7
Tape Width
8mm
Quantity
3000 units
2000
Fairchild Semiconductor Corporation
FDG311N Rev. D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
