FDG315N
July 2000
FDG315N
N-Channel Logic Level PowerTrench
MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
•
2 A, 30 V. R
DS(ON)
= 0.12
Ω
@ V
GS
= 10 V
R
DS(ON)
= 0.16
Ω
@ V
GS
= 4.5 V.
•
•
•
Low gate charge (2.1nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
Compact industry standard SC70-6 surface mount
package.
Applications
•
•
•
DC/DC converter
Load switch
Power Management
D
D
S
1
6
2
5
SC70-6
D
D
G
3
4
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
T
A
= 25°C unless otherwise noted
Parameter
Ratings
30
±
20
(Note 1a)
Units
V
V
A
W
°
C
2
6
0.75
0.48
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
260
°
C/W
Package Marking and Ordering Information
Device Marking
.
15
Device
FDG315N
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
2000
Fairchild Semiconductor International
FDG315N Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
