FDG6306P
February 2001
FDG6306P
P-Channel 2.5V Specified PowerTrench
®
MOSFET
General Description
This P
-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications wih a wide range of gate
t
drive voltage (2.5V – 12V).
Features
•
–0.6 A, –20 V.
•
Low gate charge
•
High performance trench technology for extremely
low R
DS(ON)
•
Compact industry standard SC70-6 surface mount
package
R
DS(ON)
= 420 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 630 mΩ @ V
GS
= –2.5 V
Applications
•
Battery management
•
Load switch
S
G
D
G
2 or 5
S
1 or 4
6 or 3
D
5 or 2
G
4 or 1
S
D
G
Pin 1
S
D
3 or 6
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–20
±
12
(Note 1)
Units
V
V
A
W
°C
–0.6
–2.0
0.3
–55 to +150
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
415
°C/W
Package Marking and Ordering Information
Device Marking
.06
Device
FDG6306P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
©2001
Fairchild Semiconductor Corporation
FDG6306P Rev C(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
