FDG6331L
April 2001
FDG6331L
Integrated Load Switch
General Description
This device is particularly suited for compact power
management in portable electronic equipment where
2.5V to 8V input and 0.8A output current capability are
needed. This load switch integrates a small N-Channel
power MOSFET (Q1) that drives a large P-Channel
power MOSFET (Q2) in one tiny SC70-6 package.
Features
•
–0.8 A, –8 V.
R
DS(ON)
= 260 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 330 mΩ @ V
GS
= –2.5 V
R
DS(ON)
= 450 mΩ @ V
GS
= –1.8 V
Applications
•
Power management
•
Load switch
•
Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6KV Human body model)
•
High performance trench technology for extremely
low R
DS(ON)
•
Compact industry standard SC70-6 surface mount
package
Q2
Equivalent Circuit
3
2
Q1
Vin,R1
ON/OFF
R1,C1
4
5
6
Vout,C1
IN
Vout,C1
R2
+
V
DROP –
OUT
1
See Application Circuit
Pin 1
ON/OFF
SC70-6
Absolute Maximum Ratings
Symbol
V
IN
V
ON/OFF
I
Load
P
D
T
J
, T
STG
Gate-Source Voltage (Q2)
Gate-Source Voltage (Q1)
Load Current
– Continuous
– Pulsed
Maximum Power Dissipation
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
±
8
–0.5 to 8
(Note 2)
(Note 2)
(Note 1)
Units
V
V
A
W
°C
–0.8
–2.4
0.3
–55 to +150
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
415
°C/W
Package Marking and Ordering Information
Device Marking
.31
Device
FDG6331L
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
2001
Fairchild Semiconductor Corporation
FDG6331L Rev B(W)