FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench
®
MOSFET
February 2005
FDJ1028N
N-Channel 2.5 Vgs Specified PowerTrench
®
MOSFET
Features
■
3.2 A, 20 V.
R
DS(ON)
= 90 m
Ω
@ V
GS
= 4.5 V
R
DS(ON)
= 130 m
Ω
@ V
GS
= 2.5 V
■
Low gate charge
■
High performance trench technology for extremely low
R
DS(ON)
■
FLMP SC75 package: Enhanced thermal performance in
industry-standard package size
Applications
■
Battery management
General Description
This dual N-Channel 2.5V specified MOSFET uses Fairchild’s
advanced low voltage PowerTrench process. Packaged in FLMP
SC75, the R
DS(ON)
and thermal properties of the device are
optimized for battery power management applications.
S2
S1
G1
5
4
Bottom Drain Contact
3
2
1
Bottom Drain Contact
S1
S2
G2
6
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
R
θ
JA
R
θ
JC
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation for single Operation
(Note 1a)
(Note 1a)
Parameter
Ratings
20
±
12
3.2
12
1.5
–55 to +150
Units
V
V
A
W
°
C
°
C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case
80
5
Packge Marking and Ordering Information
Device Marking
.F
Device
FDJ1028N
Reel Size
7"
Tape width
8mm
Quantity
3000 units
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDJ1028N Rev. B2 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
